Transport properties through quantum dot in a vertical electric field
Li SS; Xia JB; Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
2003
会议名称International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02)
会议录名称PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4)
页码147-148
会议日期JUL 22-26, 2002
会议地点TOULOUSE, FRANCE
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN1386-9477
部门归属chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词Hole Transport
学科领域半导体物理
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14845
专题中国科学院半导体研究所(2009年前)
通讯作者Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Li SS,Xia JB,Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.. Transport properties through quantum dot in a vertical electric field[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2003:147-148.
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