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题名: ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN
作者: XIA JB
发表日期: 1991
摘要: The electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. The hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. It is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. The lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. The variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110BAR] direction are also obtained.
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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XIA JB.ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN,PHYSICAL REVIEW B,1991,44(7):3211-3217
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