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题名: THE STUDY OF MICROSTRUCTURE IN IRON-DOPED AND SULFUR-DOPED INP CRYSTALS BY MEANS OF HREM AND COMPUTER-SIMULATION
作者: WANG LC;  LI Q;  YU SD;  ZHENG JG;  WEI M;  FENG D;  CHU YM
发表日期: 1991
摘要: The microstructures in iron- and sulphur-doped InP crystals were studied using both electron microscopy and electron diffraction. A modulated structure has been found in S-doped InP crystal, where the commensurate modulations corresponded to periodicities of 0.68 nm and 0.7 nm in real space and were related to the reflections of the cubic lattice in [111] and [113BAR] directions; they were indexed as q111* = 1/2(a* + b* + c*) and q113BAR* = 1/4(-a* - b* + 3c*), respectively. Single atomic layers of iron precipitate were observed, with preferred orientations along which precipitates are formed. Simulated calculations by means of the dynamical theory of electron diffraction using models for the precipitate structure were in good agreement with our experimental results. The relation between the modulated structure and the precipitates is also discussed.
KOS主题词: Gallium arsenide
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
WANG LC; LI Q; YU SD; ZHENG JG; WEI M; FENG D; CHU YM.THE STUDY OF MICROSTRUCTURE IN IRON-DOPED AND SULFUR-DOPED INP CRYSTALS BY MEANS OF HREM AND COMPUTER-SIMULATION,JOURNAL OF PHYSICS-CONDENSED MATTER,1991,3(36):7069-7072
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