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题名: INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY
作者: LO VC;  CHAN PW;  XU SD;  WONG SP
发表日期: 1992
摘要: The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation dosages ranging from 1 x 10(11) to 1 x 10(15) cm-2 has been performed. Using a photoinduced transient-current spectroscopy (PITCS) it was demonstrated that, for implantation dosages below 1 X 10(13) cm-2, a negative peak or negative transient current (NTC) was observed in the temperature range from 330 to 350 K. The magnitude of this negative peak increased with dosage up to a level of 1 X 10(12) cm-2, beyond which it decreased with dosage. The dosage dependence of the EL3 peak height and the resistance of the specimen have also been investigated. It was observed that the variation of the EL3 peak height with dosage was similar to the variation of the magnitude of the negative peak, that is the EL3 peak height likewise increased with dosage up to 1 X 10(12) cm-2, and then decreased. The resistance of the original high-resistivity specimen dropped abruptly when the dosage reached 1 X 10(12) cm-2. This critical dosage (1 X 10(12) cm-2) was found to be a threshold for the generation of a highly disordered state.
KOS主题词: Gallium arsenide
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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LO VC; CHAN PW; XU SD; WONG SP.INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1992,7(5):668-675
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