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题名: A DUAL ION-BEAM EPITAXY SYSTEM
作者: SU SJ;  JIANG WS;  QIN FG;  WANG XM
发表日期: 1992
摘要: The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.
刊名: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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SU SJ; JIANG WS; QIN FG; WANG XM.A DUAL ION-BEAM EPITAXY SYSTEM,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS ,1992,70(0):579-582
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