高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: INDIUM OHMIC CONTACTS TO N-ZNSE
作者: WANG YX;  HOLLOWAY PH
发表日期: 1992
摘要: The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.
刊名: VACUUM
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
6560.pdf262KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
WANG YX; HOLLOWAY PH.INDIUM OHMIC CONTACTS TO N-ZNSE,VACUUM ,1992,43(11):1149-1151
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [WANG YX]的文章
 [HOLLOWAY PH]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [WANG YX]的文章
 [HOLLOWAY PH]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发