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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM
作者: XU HD;  ZHANG SH;  WU H;  WANG HZ;  SHI XQ;  HUANG XM;  YANG CB;  CAO XN
发表日期: 1992
摘要: The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.
刊名: VACUUM
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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XU HD; ZHANG SH; WU H; WANG HZ; SHI XQ; HUANG XM; YANG CB; CAO XN.EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM,VACUUM,1992,43(11):1031-1032
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