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题名: WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD
作者: ZHANG YH;  JIANG DS;  LI F;  ZHOU JM;  MEI XB
发表日期: 1992
摘要: We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons.
KOS主题词: Superlattices as materials;  Doppler effect;  quantisation;  Measurement
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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ZHANG YH; JIANG DS; LI F; ZHOU JM; MEI XB.WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD,JOURNAL OF APPLIED PHYSICS,1992,72(7):3209-3211
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