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题名: NEAR-RESONANT RAMAN-SCATTERING FROM GAAS/ALAS SUPERLATTICES
作者: HAN HX;  WANG ZP;  LI GH;  JIANG DS;  PLOOG K
发表日期: 1992
摘要: This article presents the results of near-resonant Raman scattering measurements on GaAs/AlAs superlattices at room temperature. A strong enhancement of GaAs LO phonon-even modes resulted owing to a dipole-allowed Frohlich interaction in superlattices. Similar to the previous results, the LO phonon-even modes in a polarized configuration are observed. In contrast to previous work, however, what we observed in depolarized configurations is the LO phonon-odd modes instead of even modes. It is confirmed that the selection rules for near-resonant Raman scattering from LO phonons in this kind of superlattices are the same as those for off-resonant scattering. From the second-order Raman scattering, it is confirmed that polarized second-order Raman scattering spectra consist of overtones and combinations of two even modes, and depolarized second-order Raman scattering spectra consist of combinations of an even mode and an odd mode. Our experimental results coincide with the predictions using the recently developed Huang-Zhu model. A brief discussion on interface modes and their combination with confined modes is also presented.
KOS主题词: Phonons
刊名: CHINESE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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HAN HX; WANG ZP; LI GH; JIANG DS; PLOOG K.NEAR-RESONANT RAMAN-SCATTERING FROM GAAS/ALAS SUPERLATTICES,CHINESE PHYSICS,1992,12(4):846-852
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