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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS
作者: FENG SL;  KRYNICKI J;  ZAZOUI M;  BOURGOIN JC;  BOIS P;  ROSENCHER E
发表日期: 1993
摘要: We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.
KOS主题词: Electron paramagnetic resonance spectroscopy;  Current voltage characteristics;  Quantum wells;  metallic superlattices;  Layers
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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FENG SL; KRYNICKI J; ZAZOUI M; BOURGOIN JC; BOIS P; ROSENCHER E.ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS,JOURNAL OF APPLIED PHYSICS,1993,74(1):341-345
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