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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET)
作者: CHEN KM;  LI GH;  CHEN LX;  ZHU Y
发表日期: 1993
摘要: Three causes involved in the instability of the ISFET are proposed in this study. First, it is ascertained that hydroxyl group resident at the surface of the Si3N4 film or in the electrolyte solution is most active and subject to gain or loss of electrons. This is one of the main causes for ISFET structural instability. Secondly, the stability of the pH-sensitive FET varies with deposition conditions in the fabrication process of the ISFET. This proves to be another cause of ISFET instability. Thirdly, the pH of the measured solution varies with the measuring process and time, contributing to the instability, but is not a cause of the instability of the pH-ISFET itself. We utilized the technique of readjusting and controlling the ratio of hydroxyl groups to amine groups to enhance the stability of the ISFET. Our techniques to improve stability characteristics proved to be effective in practice.
刊名: SENSORS AND ACTUATORS B-CHEMICAL
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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CHEN KM; LI GH; CHEN LX; ZHU Y.IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET),SENSORS AND ACTUATORS B-CHEMICAL ,1993,13(0):209-211
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