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题名: QUANTITATIVE-ANALYSIS OF INXGA1-XAS BY AUGER-ELECTRON SPECTROSCOPY
作者: CHEN WD;  CUI YD
发表日期: 1993
摘要: Quantitative Auger electron spectroscopy analysis for the ternary system InGa1-xAs grown by molecular-beam epitaxy has been studied. The relative sensitivity factors are determined by with an internal reference element. The matrix correction factor for In relative to Ga was shown to be 1.08. No preferential sputtering of As for the ternary compounds was found, and the sputter correction factor, K(s)InGa is 0.75. The results are compared with that measured by the x-ray double-crystal diffraction analysis, electron probe microanalysis, and Auger analysis without matrix and sputter corrections.
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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CHEN WD; CUI YD.QUANTITATIVE-ANALYSIS OF INXGA1-XAS BY AUGER-ELECTRON SPECTROSCOPY,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,1993,11(4):2379-2381
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