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题名: NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES
作者: ZHANG YH;  YANG XP;  LIU W;  ZHANG PH;  JIANG DS
发表日期: 1994
摘要: We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.
KOS主题词: infrared detector;  Transportation
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
ZHANG YH; YANG XP; LIU W; ZHANG PH; JIANG DS.NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES,APPLIED PHYSICS LETTERS,1994,65(9):1148-1150
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