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题名: WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GAAS/ALGAAS QUANTUM-WELLS
作者: JIN SR;  XU ZY;  LUO JS;  LUO CP;  XU JZ;  ZHENG BZ
发表日期: 1994
摘要: The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreasing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.
刊名: ACTA PHYSICA SINICA-OVERSEAS EDITION
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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JIN SR; XU ZY; LUO JS; LUO CP; XU JZ; ZHENG BZ.WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GAAS/ALGAAS QUANTUM-WELLS,ACTA PHYSICA SINICA-OVERSEAS EDITION,1994,3(5):384-389
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