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Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities
Peng YS (Peng Yin-Sheng); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Niu JB (Niu Jie-Bin); Jia R (Jia Rui); Wang ZG (Wang Zhan-Guo); Liang S (Liang Song); Yang XH (Yang Xiao-Hong); Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
2010
Source PublicationACTA PHYSICA SINICA
Volume59Issue:10Pages:7073-7077
AbstractThis paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.
metadata_24国内
KeywordPhotonic Crystal Nanocavity
Subject Area半导体材料
Funding OrganizationProject supported by the National Basic Research Program of China (Grant Nos. 2006CB604904, 2006CB604908) and the National Natural Science Foundation of China (Grant Nos. 60676029, 60990315, 60625402).
Indexed BySCI
Language中文
Date Available2010-11-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13919
Collection中科院半导体材料科学重点实验室
Corresponding AuthorPeng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
Recommended Citation
GB/T 7714
Peng YS ,Ye XL ,Xu B ,et al. Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities[J]. ACTA PHYSICA SINICA,2010,59(10):7073-7077.
APA Peng YS .,Ye XL .,Xu B .,Niu JB .,Jia R .,...&Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn.(2010).Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities.ACTA PHYSICA SINICA,59(10),7073-7077.
MLA Peng YS ,et al."Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities".ACTA PHYSICA SINICA 59.10(2010):7073-7077.
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