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题名: Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
作者: Si JJ;  Yang QQ;  Wang HJ;  Wang QM
出版日期: 1998
会议日期: SEP 18-19, 1998
摘要: Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.
会议名称: Conference on Integrated Optoelectronics II
KOS主题词: Quantum dot;  Electroluminescence;  Photoluminescence
会议文集: INTEGRATED OPTOELECTRONICS II, 3551
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Si JJ; Yang QQ; Wang HJ; Wang QM .Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures .见:SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,49-52
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