Light-excited structural instability of a-Si : H.

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Light-excited structural instability of a-Si : H.
	Kong GL; Zhang DL; Yue GZ; Wang YQ; Liao XB; Kong GL Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
会议录名称	AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
页码	697-708
会议日期	APR 14-17, 1998
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-413-0
部门归属	chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
摘要	With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect.
关键词	Hydrogenated Amorphous-silicon
学科领域	半导体材料
主办者	Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13797
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kong GL Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Kong GL,Zhang DL,Yue GZ,et al. Light-excited structural instability of a-Si : H.[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:697-708.