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题名: A novel high sensitivity CE-PTHPT for optical fiber communication
作者: Guohui L;  Yang R;  Dejun H;  Chengzhou J;  Shucheng D;  Eenjun Z;  YiPing Z;  Junming Z
出版日期: 2001
会议日期: NOV 12-15, 2001
摘要: Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.
会议名称: Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
KOS主题词: phototransistors;  Optical fiber communication;  Gallium arsenide;  high gain
会议文集: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Guohui L; Yang R; Dejun H; Chengzhou J; Shucheng D; Eenjun Z; YiPing Z; Junming Z .A novel high sensitivity CE-PTHPT for optical fiber communication .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,221-224
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