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题名: Optical study of localized and delocalized states in GaAsN/GaAs
作者: Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW
出版日期: 2003
会议日期: DEC 01-05, 2003
摘要: Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.
会议名称: Symposium on GaN and Related Alloys held at the MRS Fall Meeting
KOS主题词: atomic layer deposition;  Alloys;  Photoluminescence;  Relaxation
会议文集: GAN AND RELATED ALLOYS - 2003, 798
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu ZY; Luo XD; Yang XD; Tan PH; Yang CL; Ge WK; Zhang Y; Mascarenhas A; Xin HP; Tu CW .Optical study of localized and delocalized states in GaAsN/GaAs .见:MATERIALS RESEARCH SOCIETY .GAN AND RELATED ALLOYS - 2003, 798,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,2003,695-700
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