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题名: Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
作者: Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW
出版日期: 2003
会议日期: MAY 25-30, 2003
摘要: We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
会议名称: 5th International Conference on Nitride Semiconductors (ICNS-5)
KOS主题词: Substrate;  Diodes;  Development
会议文集: 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW .Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask .见:WILEY-VCH, INC .5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS,605 THIRD AVE, NEW YORK, NY 10158-0012 USA ,2003,2167-2170
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