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Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity
Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua); Wang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn
2010
Source PublicationAPPLIED PHYSICS EXPRESS
Volume3Issue:7Pages:Art. No. 072001
AbstractThe photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs) coupling with InGaN/GaN quantum wells (QWs) have been systematically studied. The SP-QW coupling behaviors in the areas of GaN cap layer coated with silver thin film were compared at different temperatures and excitation powers. It is found that the internal quantum efficiency (IQE) of the light emitting diodes (LEDs) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to SP-QW coupling. The observation is explained by the balance between the extraction efficiency of SPs and the IQE of LEDs
metadata_24国内
KeywordLight-emitting-diodes
Subject Area光电子学
Funding OrganizationThis work was supported by the grants of the National Natural Science Foundation (Nos. 10704052, 60776065, and 60776003), Suzhou High-Tech Research Program (ZXG0712) and the Chinese Basic Research program (973 No. 2007CB936701) from the Chinese Science and Technology Ministry.
Indexed BySCI
Language英语
Date Available2010-08-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13493
Collection集成光电子学国家重点实验室
Corresponding AuthorWang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn
Recommended Citation
GB/T 7714
Huang ZL ,Wang JF ,Liu ZH ,et al. Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity[J]. APPLIED PHYSICS EXPRESS,2010,3(7):Art. No. 072001.
APA Huang ZL .,Wang JF .,Liu ZH .,Xu K .,Yang H .,...&Wang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn.(2010).Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity.APPLIED PHYSICS EXPRESS,3(7),Art. No. 072001.
MLA Huang ZL ,et al."Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity".APPLIED PHYSICS EXPRESS 3.7(2010):Art. No. 072001.
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