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题名: The third subband population in modulation-doped InGaAs/InAlAs heterostructures
作者: Li HX;  Wang ZG;  Liang JB;  Xu B;  Wu J;  Gong Q;  Jiang C;  Liu FQ;  Zhou W
发表日期: 1997
摘要: We have observed the population of the third (n=3) two-dimensional electron subband of InGaAs/ InAlAs modulation-doped structures with very dense sheet carrier density by means of Fourier transform photoluminescence (PL). Three well-resolved PL peaks centered at 0.737, 0.908, and 0.980 eV are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. The subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. Thanks to the presence of the Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (C) 1997 American Institute of Physics.
KOS主题词: Electron;  Temperature;  Density
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li HX; Wang ZG; Liang JB; Xu B; Wu J; Gong Q; Jiang C; Liu FQ; Zhou W .The third subband population in modulation-doped InGaAs/InAlAs heterostructures ,JOURNAL OF APPLIED PHYSICS,1997,82(12):6107-6109
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