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题名: Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
作者: Wang ZM;  Feng SL;  Yang XP;  Deng YM;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Han PD;  Wang FL;  Duan XF
发表日期: 1997
摘要: The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.
KOS主题词: Gallium arsenide;  Development
刊名: PHYSICS OF LOW-DIMENSIONAL STRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang ZM; Feng SL; Yang XP; Deng YM; Lu ZD; Xu ZY; Chen ZG; Zheng HZ; Han PD; Wang FL; Duan XF .Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots ,PHYSICS OF LOW-DIMENSIONAL STRUCTURES ,1997,12(0):213-218
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