高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots
作者: Xu ZY;  Lu ZD;  Yuan ZL;  Yang XP;  Zheng BZ;  Xu JZ;  Ge WK;  Wang Y;  Wang J;  Chang LL
发表日期: 1998
摘要: We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.
KOS主题词: Quantum dots;  Photoluminescence;  Relaxation;  Development;  Wells
刊名: SUPERLATTICES AND MICROSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1049.pdf111KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Xu ZY; Lu ZD; Yuan ZL; Yang XP; Zheng BZ; Xu JZ; Ge WK; Wang Y; Wang J; Chang LL .Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots ,SUPERLATTICES AND MICROSTRUCTURES ,1998,23(2):381-387
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Xu ZY]的文章
 [Lu ZD]的文章
 [Yuan ZL]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Xu ZY]的文章
 [Lu ZD]的文章
 [Yuan ZL]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发