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题名: Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
作者: Wang HM;  Fan TW;  Wu J;  Zeng YP;  Dong JR;  Kong MY
发表日期: 1998
摘要: InAs layers were grown on GaAs by molecular beam epitaxy (MBE) at substrate temperature 450 and 480 degrees C, and the surface morphology was studied with scanning electron microscopy (SEM). We have observed a high density of hexagonal deep pits for samples grown at 450 degrees C, however, the samples grown at 480 degrees C have smooth surface. The difference of morphology can be explained by different migration of cations which is temperature dependent. Cross-sectional transmission electron microscopy (XTEM) studies showed that the growth temperature also affect the distributions of threading dislocations in InAs layers because the motion of dislocations is kinetically limited at lower temperature. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Threading dislocations;  Heterostructures;  Water-power;  Force and energy;  Metric system;  Silicon
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang HM; Fan TW; Wu J; Zeng YP; Dong JR; Kong MY .Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE ,JOURNAL OF CRYSTAL GROWTH ,1998,186(1-2):38-42
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