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题名: Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
作者: Li HX;  Wang ZG;  Liang JB;  Xu B;  Jiang C;  Gong Q;  Liu FQ;  Zhou W
发表日期: 1998
摘要: Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.
KOS主题词: Quantum wells;  Semiconductors;  Luminescence;  Mass;  Group theory;  Heterojunctions;  Luminescence;  Density
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li HX; Wang ZG; Liang JB; Xu B; Jiang C; Gong Q; Liu FQ; Zhou W .Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells ,SOLID STATE COMMUNICATIONS,1998,106(12):811-814
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