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题名: Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy
作者: Li XB;  Sun DZ;  Zhang JP;  Zhu SR;  Kong MY
发表日期: 1998
摘要: GaN epilayers on sapphire (0001) substrates were grown by the gas source molecular beam epitaxy (GSMBE) method using ammonia (NH,) gas as the nitrogen source. Properties of gallium nitride (GaN) epilayers grown under various growth conditions were investigated. The growth rate is up to 0.6 mu m/h in our experiments. Cathodoluminescence, photoluminescence and Hall measurements were used to characterize the films. It was shown that the growth parameters have a significant influence on the GaN properties. The yellow luminescence was enhanced at higher growth temperature. And a blue emission which maybe related to defects or impurity was observed. Although the emission at 3.31 eV can be suppressed by a low-temperature buffer layer, a high-quality GaN epilayer can be obtained without the buffer layer. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: Light emitting diodes
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li XB; Sun DZ; Zhang JP; Zhu SR; Kong MY .Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,191(1-2):34-38
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