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题名: Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
作者: Pan Z;  Zhang Y;  Du Y;  Wu RH
发表日期: 1998
摘要: The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.
KOS主题词: Semiconductor lasers;  SELECTIVE OXIDATION;  Stability;  Wet oxidation;  Microstructure
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Pan Z; Zhang Y; Du Y; Wu RH .Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1998,37(6B):3673-3675
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