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题名: Modification of InAs quantum dot structure by the growth of the capping layer
作者: Lian GD;  Yuan J;  Brown LM;  Kim GH;  Ritchie DA
发表日期: 1998
摘要: InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. (C) 1998 American Institute of Physics.
KOS主题词: semiconductor
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lian GD; Yuan J; Brown LM; Kim GH; Ritchie DA .Modification of InAs quantum dot structure by the growth of the capping layer ,APPLIED PHYSICS LETTERS,1998,73(1):49-51
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