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题名: The effects of electric field on the electronic structure of a semiconductor quantum dot
作者: Chang K;  Xia JB
发表日期: 1998
摘要: The effect of electric field on the electronic structure of a spherical quantum dot is studied in the framework of the effective-mass envelope-function theory. The dependence of the energy of electron states and hole states on the applied electric field and on the quantum dot size is investigated; the mixing of heavy holes and light holes is taken into account. The selection rule for the optical transition between the conduction band and valence band states is obtained. The exciton binding energies are calculated as functions of the quantum dot radius and the strength of the electric field. (C) 1998 American Institute of Physics.
KOS主题词: absorption;  antiphase boundaries;  Crystals;  States;  Cantons;  Transitions;  Dependency;  Glass;  well
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chang K; Xia JB .The effects of electric field on the electronic structure of a semiconductor quantum dot ,JOURNAL OF APPLIED PHYSICS,1998,84(3):1454-1459
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