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题名: Structural study of YSi1.7 layers formed by channeled ion beam synthesis
作者: Wu MF;  Yao SD;  Vantomme A;  Hogg S;  Pattyn H;  Langouche G;  Yang QQ;  Wang QM
发表日期: 1998
摘要: High quality YSi1.7 layers (chi(min) of Y is 3.5%) have been formed by 60 keV Y ion implantation in Si (111) substrates to a dose of 1.0 x 10(17)/cm(2) at 450 degrees C using channeled ion beam synthesis (CIBS). It shows that, compared to the conventional nonchanneled ion beam synthesis, CIBS is beneficial in forming YSi1.7 layers with better quality due to the lower defect density created in the implanted layer. Rutherford backscattering/channeling and x-ray diffraction have been used to study the structure and the strain of the YSi1.7 layers. The perpendicular and parallel elastic strains of the YSi1.7 epilayer are e(perpendicular to) = -0.67% +/- 0.02% and e(parallel to) = +1.04% +/- 0.08%. The phenomenon that a nearly zero mismatch of the YSi1.7/Si (111) system results in a nonpseudomorphic epilayer with a rather large parallel strain relative to the Si substrate (epsilon(parallel to) = +1.09%) is explained, and the model is further used to explain the elastic strain of epitaxial ErSi1.7 and GdSi1.7 rare-earth silicides. (C) 1998 American Vacuum Society.
KOS主题词: Thin films;  Implantation;  Metric system;  Silicon;  Diffraction;  Stability;  Dynamics
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu MF; Yao SD; Vantomme A; Hogg S; Pattyn H; Langouche G; Yang QQ; Wang QM .Structural study of YSi1.7 layers formed by channeled ion beam synthesis ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1998,16(4):1901-1906
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