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题名: Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures
作者: Wang YJ;  Nickel HA;  McCombe BD;  Peeters FM;  Shi JM;  Hai GQ;  Wu XG;  Eustis TJ;  Schaff W
发表日期: 1998
摘要: A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: crystal surface and interface vibrations;  Gallium arsenide;  Heterostructures;  metallic superlattices;  Electrons
刊名: PHYSICA E
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W .Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures ,PHYSICA E,1998,2(1-4):161-165
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