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题名: Effects of growth interruption on self-assembled InAs/GaAs islands
作者: Wang ZM;  Feng SL;  Yang XP;  Lu ZD;  Xu ZY;  Zheng HZ;  Wang FL;  Han PD;  Duan XF
发表日期: 1998
摘要: The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: Islands;  atomic layer deposition;  QUANTUM;  Organization;  transition;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang ZM; Feng SL; Yang XP; Lu ZD; Xu ZY; Zheng HZ; Wang FL; Han PD; Duan XF .Effects of growth interruption on self-assembled InAs/GaAs islands ,JOURNAL OF CRYSTAL GROWTH ,1998,192(1-2):97-101
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