高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy
作者: Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Fu RH;  Kong MY
发表日期: 1998
摘要: Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (MD) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (MBE) system. Though the Al composition is as low as 0.036, as deduced from photoluminescence (PL) measurements, the AlGaN barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The 2DEG characteristics are verified by the variable temperature Hall measurements down to 7 K. Using a parallel conduction model, we estimate the actual mobility of the 2DEG to be 1100 cm(2)/V s as the sheet carrier density to be 1.0 x 10(12) cm(-2). Our results show that the AlGaN/GaN system is very suitable for the fabrication of high electron mobility transistors (HEMTs). (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: Electron gas;  atomic layer deposition;  Photoluminescence;  Gallium nitride;  Luminescence;  astrophysical plasma;  Laminar flow;  Space plasmas
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
983.pdf129KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zhang JP; Sun DZ; Li XB; Wang XL; Fu RH; Kong MY .The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,192(1-2):93-96
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zhang JP]的文章
 [Sun DZ]的文章
 [Li XB]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zhang JP]的文章
 [Sun DZ]的文章
 [Li XB]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发