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题名: Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction
作者: Wang HM;  Zeng YP;  Zhou HW;  Kong MY
发表日期: 1998
摘要: We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Gallium arsenide;  misalignment;  Electric distortion;  Bauschinger effect;  Layers;  atomic layer deposition;  Metric system;  Silicon;  Heterostructures;  Development
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang HM; Zeng YP; Zhou HW; Kong MY .Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction ,JOURNAL OF CRYSTAL GROWTH ,1998,191(4):627-630
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