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题名: Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
作者: Gong Q;  Liang JB;  Xu B;  Ding D;  Li HX;  Jiang C;  Zhou W;  Liu FQ;  Wang ZG;  Qiu XH;  Shang GY;  Bai CL
发表日期: 1998
摘要: Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Atomic force microscopy;  Quantum dot;  Gallium arsenide;  Lasers;  Development
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gong Q; Liang JB; Xu B; Ding D; Li HX; Jiang C; Zhou W; Liu FQ; Wang ZG; Qiu XH; Shang GY; Bai CL .Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,192(3-4):376-380
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