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题名: Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
作者: Nagai H;  Zhu QS;  Kawaguchi Y;  Hiramatsu K;  Sawaki N
发表日期: 1998
摘要: Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3 x 10(17) cm(-3) at room temperature. The DLTS spectrum has a dominant peak D-1 with activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg-N-H complexes. (C) 1998 American Institute of Physics. [S0003-6951(98)04340-X].
KOS主题词: deep impurities;  Deep level transient spectroscopy
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Nagai H; Zhu QS; Kawaguchi Y; Hiramatsu K; Sawaki N .Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy ,APPLIED PHYSICS LETTERS,1998,73(14):2024-2026
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