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题名: Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
作者: Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG
发表日期: 1998
摘要: Microstructure of GaN buffer layer grown on (111)MgAl2O4 substrate by metalorganic vapor phase epitaxy (MOVPE) was studied by transmission electron microscopy (TEM). It has been observed that the early deposition of GaN buffer layer on the substrate at a relatively low temperature formed a continual island-sublayer (5 nm thick) with hexagonal crystallographic structure, and the subsequent GaN buffer deposition led to crystal columns which are composed of nano-crystal slices with mixed cubic and hexagonal phases. After high-temperature annealing, the crystallinity of nano-crystal slices and island-sublayer in the buffer layer have been improved. The formation of threading dislocations in the GaN him is attributed not only to the lattice mismatch of GaN/MgAl2O4 interface, but also to the stacking mismatches at the crystal column boundaries. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
KOS主题词: Transmission electron microscopy;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Semiconductor lasers;  Photography--Films;  Finite volume method;  Aluminum oxide;  Nitrides;  Defects
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yang HF; Han PD; Cheng LS; Zhang Z; Duan SK; Teng XG .Microstructure evolution of GaN buffer layer on MgAl2O4 substrate ,JOURNAL OF CRYSTAL GROWTH ,1998,193(4):478-483
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