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题名: Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate
作者: Zhao MS;  Dai ZX;  Li GH;  Wang RZ;  Jiang DS
发表日期: 1998
摘要: We report the observation of oscillating features in differential reflectance spectra from the GaAs epilayer grown on Si substrate in the energy range both below and above the fundamental band gap. It is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. The interference arises from two light beams reflected from different interfaces of the sample. The calculated spectra in the nonabsorption region are in good agreement with measured data. It is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)08723-4].
KOS主题词: Semiconductors;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao MS; Dai ZX; Li GH; Wang RZ; Jiang DS .Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate ,JOURNAL OF APPLIED PHYSICS,1998,84(11):6466-6468
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