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题名: Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix
作者: Li GH;  Han HX;  Ding K;  Wang ZP
发表日期: 1998
摘要: We have investigated the dependence on hydrostatic pressure of the photoluminescence of an InAs submonolayer embedded in a GaAs matrix at 15 K and for pressure up to 8 GPa. Strong InAs-related emissions are observed in all three samples at ambient pressure. The temperature dependence of the emission intensity for these Peaks can be well characterized by the thermal activation of excitons from the InAs layer to the GaAs matrix. With increasing pressure, the InAs-related peaks shift to. higher energies. The pressure coefficients of these peaks are very close to that of the free exciton in bulk GaAs. Some weak peaks observed at pressures above 4.2 GPa are attributed to indirect transitions involving X states in the InAs layer. These results are similar to the pressure behaviour observed in the InAs/GaAs monolayer structures. A group of new lines has been observed in the spectra when pressure is increased beyond 2.5 GPa, which is attributed to the N isoelectronic traps in the GaAs matrix.
KOS主题词: Quantum wells;  emission
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li GH; Han HX; Ding K; Wang ZP .Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix ,JOURNAL OF PHYSICS-CONDENSED MATTER,1998,10(48):11111-11120
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