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题名: Uniformity enhancement of the self-organized InAs quantum dots
作者: Zhu HJ;  Wang ZM;  Wang H;  Cui LQ;  Feng SL
发表日期: 1999
摘要: Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the height of quantum dots. Uniformity of quantum dots has been enhanced because the full-width of half-maximum of photoluminescence decrease from 80 to 27 meV in these samples as the interruption time is increased. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time, which can be used to modulate energy level of quantum dots. All of the phenomenon mentioned above can be attributed to the diffusion of In atoms from the tops of InAs islands to the top of GaAs cap layer caused by the difference between the surface energies of InAs and GaAs. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Threshold;  Development;  Lasers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhu HJ; Wang ZM; Wang H; Cui LQ; Feng SL .Uniformity enhancement of the self-organized InAs quantum dots ,JOURNAL OF CRYSTAL GROWTH ,1999,197(1-2):372-375
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