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题名: Effect of growth interruption on the optical properties of InAs/GaAs quantum dots
作者: Lu ZD;  Xu JZ;  Zheng BZ;  Xu ZY;  Ge WK
发表日期: 1999
摘要: The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the growth rate. In the case of low growth rate, we have found that the GI may introduce either red-shift or blue-shift in PL with increase of the interruption lime, depending on the InAs thickness. The observed red shift in our 1.7 monolayer (ML) sample is attributed to the evolution of the InAs islands during the growth interruption. While the blue-shift in the 3 ML sample is suggested to be mainly caused by the strain effect. In addition, nearly zero shift was observed for the sample with thickness around 2.5 ML, (C) 1999 Elsevier Science Ltd. All rights reserved.
KOS主题词: Semiconductors;  Optical properties;  Luminescence;  Time;  Shapes;  Luminescence;  Wells
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lu ZD; Xu JZ; Zheng BZ; Xu ZY; Ge WK .Effect of growth interruption on the optical properties of InAs/GaAs quantum dots ,SOLID STATE COMMUNICATIONS ,1999,109(10):649-653
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