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题名: Substrate surface atomic structure influence on the growth of InAlAs quantum dots
作者: Zhou W;  Zhu ZM;  Liu FQ;  Xu B;  Xu HZ;  Wang ZG
发表日期: 1999
摘要: We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: Photoluminescence;  Quantum dots;  atomic layer deposition;  Gallium arsenide;  Germanium;  Ensembles
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhou W; Zhu ZM; Liu FQ; Xu B; Xu HZ; Wang ZG .Substrate surface atomic structure influence on the growth of InAlAs quantum dots ,JOURNAL OF CRYSTAL GROWTH ,1999,200(3-4):608-612
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