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题名: Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
作者: Zhuang QD;  Li JM;  Zeng YP;  Pan L;  Li HX;  Kong MY;  Lin LY
发表日期: 1999
摘要: InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 mu m infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dots;  Structure;  Transmission electron microscopy;  X rays;  X-ray;  X-ray crystallography;  Islands;  Development;  Gallium arsenide;  multilayers;  Surfaces
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhuang QD; Li JM; Zeng YP; Pan L; Li HX; Kong MY; Lin LY .Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures ,JOURNAL OF CRYSTAL GROWTH ,1999,200(3-4):375-381
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