高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
作者: Xu HZ;  Gong Q;  Xu B;  Jiang WH;  Wang JZ;  Zhou W;  Wang ZG
发表日期: 1999
摘要: Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: Monomolecular films;  atomic layer deposition;  atomic layer deposition;  temperature dependence;  thermal activation;  Photoluminescence
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
884.pdf176KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Xu HZ; Gong Q; Xu B; Jiang WH; Wang JZ; Zhou W; Wang ZG .Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates ,JOURNAL OF CRYSTAL GROWTH ,1999,200(1-2):70-76
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Xu HZ]的文章
 [Gong Q]的文章
 [Xu B]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Xu HZ]的文章
 [Gong Q]的文章
 [Xu B]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发