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题名: Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)
作者: Sun XL;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang YT;  Li GH;  Wang ZG
发表日期: 1999
摘要: The thermal stability of cubic-phase GaN (c-GaN) films are investigated by photoluminescence (PL) and Raman scattering spectroscopy. C-GaN films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition. PL measurements show that the near-band-edge emissions in the as-grown GaN layers and thermally treated samples are mainly from c-GaN. No degradation of the optical qualities is observed after thermal annealing. Raman scattering spectroscopy shows that the intensity of the E-2 peak from hexagonal GaN grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 degrees C has no obvious effect on the samples with high crystal quality. (C) 1999 American Institute of Physics. [S0003-6951(99)04719-1].
KOS主题词: Raman spectroscopy;  phase;  Phonons
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Sun XL; Yang H; Zheng LX; Xu DP; Li JB; Wang YT; Li GH; Wang ZG .Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001) ,APPLIED PHYSICS LETTERS,1999,74(19):2827-2829
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