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题名: AlGaInP visible quantum well lasers for information technology
作者: Yu JZ;  Chen LH;  Ma XY;  Wang QM
发表日期: 1999
摘要: 650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.
KOS主题词: Diodes
刊名: CZECHOSLOVAK JOURNAL OF PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yu JZ; Chen LH; Ma XY; Wang QM .AlGaInP visible quantum well lasers for information technology ,CZECHOSLOVAK JOURNAL OF PHYSICS ,1999,49(5):791-796
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