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题名: Structural and photoelectric studies on double barrier quantum well infrared detectors
作者: Wu WG;  Jiang DS;  Cui LQ;  Song CY;  Zhuang Y
发表日期: 1999
摘要: GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making 3-5 um photovoltaic infrared (IR) detectors with a peak detectivity of 5 x 10(11) cm Hz(1/2)/W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine successfully the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the linear array of the detectors are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region. The spectral response of the IR photocurrent of the devices is also measured and compared with the temperature dependent IR absorption of the DBQW samples in order to get a better understanding of the bias-controlled optical and transport behavior of the detector photoresponse and thus to optimize the detector performance. (C) 1999 Elsevier Science Ltd. All rights reserved.
KOS主题词: photodetector
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wu WG; Jiang DS; Cui LQ; Song CY; Zhuang Y .Structural and photoelectric studies on double barrier quantum well infrared detectors ,SOLID-STATE ELECTRONICS,1999,43(4):723-727
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