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题名: The growth of SiC on Si substrates with C2H4 and Si2H6
作者: Wang YS;  Li JM;  Lin LY;  Zhang FF
发表日期: 1999
摘要: SiC was grown on Si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of C2H4 and S2H6 at 1050 degrees C. SiC formed during removal of oxide could be removed at 1150 degrees C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2 x 1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: Metric system;  Silicon;  SIC;  Epitaxy;  Reflection high energy electron diffraction;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Silicon;  Surfaces;  Photography--Films;  Finite volume method;  Layer
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang YS; Li JM; Lin LY; Zhang FF .The growth of SiC on Si substrates with C2H4 and Si2H6 ,APPLIED SURFACE SCIENCE,1999,148(3-4):189-195
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