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题名: A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well
作者: Kong MY;  Wang XL;  Pan D;  Zeng YP;  Wang J;  Ge WK
发表日期: 1999
摘要: Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. (C) 1999 American Institute of Physics. [S0021-8979(99)08615-6].
KOS主题词: Optical properties;  thermal activation;  metallic superlattices;  multilayers;  Stability;  Islands;  Development
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Kong MY; Wang XL; Pan D; Zeng YP; Wang J; Ge WK .A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well ,JOURNAL OF APPLIED PHYSICS,1999,86(3):1456-1459
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